aot2140l/AOB2140L general description product summary v ds i d (at v gs =10v) 195a r ds(on) (at v gs =10v) < 1.5m? r ds(on) (at v gs =4.5v) < 2m? applications 100% uis tested 100% rg tested ? dc motor driver ? synchronous rectification in dc/dc and ac/dc converters aot2140l to-220 tube 1000 AOB2140L to-263 tape & reel 800 40v n-channel alphasgt tm orderable part number package type form minimum order quantity 40v ? trench power alphasgt tm technology ? low r ds(on) ? low gate charge ? optimized ruggedness ? rohs and halogen-free compliant to - 263 d 2 pak top view bottom view d d s g g s AOB2140L aot2140l to220 top view bottom view d s g d d g s d g d s symbol v ds v gs i dm i as avalanche energy l=0.3mh c e as t j , t stg symbol t 10s steady-state steady-state r jc power dissipation b 136 t c =100c p d 40 272 gate-source voltage pulsed drain current c 195 parameter drain-source voltage continuous drain current g maximum junction-to-case c/w c/w maximum junction-to-ambient a d 0.42 60 0.55 AOB2140L to-263 tape & reel 800 w i d a 70 a 1000 i dsm 45.5 mj 735 57 195 va absolute maximum ratings t a =25c unless otherwise noted 8.3 power dissipation a maximum junction-to-ambient a c/w r ja 12 50 15 t c =25c avalanche current c continuous drain current thermal characteristics parameter max t a =70c 5.3 c units junction and storage temperature range -55 to 175 typ p dsm w t a =25c t a =25c t a =70c t c =25c t c =100c 20 v maximum units rev.1.0: september 2017 www.aosmd.com page 1 of 6 downloaded from: http:///
aot2140l/AOB2140L symbol min typ max units bv dss 40 v v ds =40v, v gs =0v 1 t j =55c 5 i gss 100 na v gs(th) gate threshold voltage 1.3 1.8 2.3 v 1.2 1.5 t j =125c 1.75 2.2 1.5 2.0 m? g fs 100 s v sd 0.66 1 v i s 195 a c iss 9985 pf c oss 1635 pf c rss 95 pf r g 1.3 2.6 3.9 ? q g (10v) 128 180 nc q g (4.5v) 54 80 nc q gs 29 nc q gd 11 nc q oss output charge v gs =0v, v ds =20v 67 nc t d(on) 16 ns t r 16 ns t d(off) 125 ns reverse transfer capacitance v gs =0v, v ds =20v, f=1mhz v ds =v gs, i d =250 a output capacitance forward transconductance i s =1a, v gs =0v v ds =5v, i d =20a v gs =10v, i d =20a v ds =0v, v gs =20v maximum body-diode continuous current g input capacitance gate-body leakage current turn-off delaytime v gs =10v, v ds =20v, r l =1 , r gen =3 diode forward voltage dynamic parameters v gs =4.5v, i d =20a turn-on rise time gate source charge gate drain charge total gate charge switching parameters turn-on delaytime m? v gs =10v, v ds =20v, i d =20a total gate charge electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions gate resistance f=1mhz i dss a zero gate voltage drain current drain-source breakdown voltage i d =250 a, v gs =0v r ds(on) static drain-source on-resistance t d(off) 125 ns t f 27 ns t rr 29 ns q rr 107 nc applications or use as critical components in life support devices or systems are not authorized. aos does not assume any liability arising out of such applicatio ns or uses of its products. aos reserves the right to improve product design,functions and reliability without no tice. body diode reverse recovery charge body diode reverse recovery time i f =20a, di/dt=500a/ s turn-off delaytime turn-off fall time r gen =3 i f =20a, di/dt=500a/ s a. the value of r ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. the power dissipation p dsm is based on r ja t 10s and the maximum allowed junction temperature of 150 c. the value in any given application depends on the user's specific board design, and th e maximum temperature of 175 c may be used if the pcb allows it. b. the power dissipation p d is based on t j(max) =175 c, using junction-to-case thermal resistance, and i s more useful in setting the upper dissipation limit for cases where additional heatsi nking is used. c. single pulse width limited by junction temperatu re t j(max) =175 c. d. the r ja is the sum of the thermal impedance from junction t o case r jc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175 c. the soa curve provides a single pulse rating. g. the maximum current rating is package limited. h. these tests are performed with the device mounte d on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25 c. rev.1.0: september 2017 www.aosmd.com page 2 of 6 downloaded from: http:///
aot2140l/AOB2140L typical electrical and thermal characteristics 0 20 40 60 80 100 120 1 2 3 4 5 i d (a) v gs (volts) figure 2: transfer characteristics (note e) 0 1 2 3 0 5 10 15 20 25 30 r ds(on) (m ) i d (a) figure 3: on - resistance vs. drain current and gate 0.8 1 1.2 1.4 1.6 1.8 0 25 50 75 100 125 150 175 200 normalized on-resistance temperature (c) figure 4: on - resistance vs. junction temperature v gs =4.5v i d =20a v gs =10v i d =20a 25 c 125 c v ds =5v v gs =4.5v v gs =10v 0 20 40 60 80 100 120 0 1 2 3 4 5 i d (a) v ds (volts) figure 1: on-region characteristics (note e) v gs =2.5v 3v 3.5v 10v 4.5v d figure 3: on - resistance vs. drain current and gate voltage (note e) 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 1.0e+01 1.0e+02 0.0 0.2 0.4 0.6 0.8 1.0 i s (a) v sd (volts) figure 6: body-diode characteristics (note e) 25 c 125 c figure 4: on - resistance vs. junction temperature (note e) 0 0.5 1 1.5 2 2.5 3 2 4 6 8 10 r ds(on) (m ) v gs (volts) figure 5: on-resistance vs. gate-source voltage (note e) i d =20a 25 c 125 c rev.1.0: september 2017 www.aosmd.com page 3 of 6 downloaded from: http:///
aot2140l/AOB2140L typical electrical and thermal characteristics 0 100 200 300 400 500 600 700 800 900 1000 0.0001 0.001 0.01 0.1 1 10 100 power (w) pulse width (s) figure 10: single pulse power rating junction - to - 0 2 4 6 8 10 0 20 40 60 80 100 120 140 v gs (volts) q g (nc) figure 7: gate-charge characteristics 0 2000 4000 6000 8000 10000 12000 0 5 10 15 20 25 30 35 40 capacitance (pf) v ds (volts) figure 8: capacitance characteristics c iss c oss c rss v ds =20v i d =20a t j(max) =175 c t c =25 c 10 s 0.0 0.1 1.0 10.0 100.0 1000.0 10000.0 0.01 0.1 1 10 100 i d (amps) v ds (volts) v > or equal to 4.5v 10 s 1ms dc r ds(on) limited t j(max) =175 c t c =25 c 100 s 10ms figure 10: single pulse power rating junction - to - case (note f) 0.01 0.1 1 10 1e-05 0.0001 0.001 0.01 0.1 1 10 100 z jc normalized transient thermal resistance pulse width (s) figure 11: normalized maximum transient thermal imp edance (note f) single pulse d=t on /t t j,pk =t c +p dm .z jc .r jc t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse v gs > or equal to 4.5v figure 9: maximum forward biased safe operating area (note f) r jc =0.55 c/w rev.1.0: september 2017 www.aosmd.com page 4 of 6 downloaded from: http:///
aot2140l/AOB2140L typical electrical and thermal characteristics 0 50 100 150 200 250 300 350 0 25 50 75 100 125 150 175 power dissipation (w) t case ( c) figure 12: power de-rating (note f) 0 50 100 150 200 250 0 25 50 75 100 125 150 175 current rating i d (a) t case ( c) figure 13: current de-rating (note f) 1 10 100 1000 10000 1e-05 0.001 0.1 10 1000 power (w) pulse width (s) t a =25 c 0 0.5 1 1.5 2 0 10 20 30 40 eoss(uj) v ds (volts) 0.001 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 10 100 1000 z ja normalized transient thermal resistance pulse width (s) figure 16: normalized maximum transient thermal imp edance (note h) single pulse d=t on /t t j,pk =t a +p dm .z ja .r ja t on t p dm in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse pulse width (s) figure 15: single pulse power rating junction- to-ambient (note h) r ja =60 c/w v ds (volts) figure 14: coss stored energy rev.1.0: september 2017 www.aosmd.com page 5 of 6 downloaded from: http:///
aot2140l/AOB2140L - + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off l bv unclamped inductive switching (uis) test circuit & waveforms vds dss 2 e = 1/2 li ar ar figure a: gate charge test circuit & waveforms figure b: resistive switching test circuit & wavefor ms figure c: unclamped inductive switching (uis) test c ircuit & waveforms vdd vgs id vgs rg dut - + vdc vgs vds id vgs i ig vgs - + vdc dut l vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar di/dt i rm rr vdd vdd q = - idt t rr figure d: diode recovery test circuit & waveforms rev.1.0: september 2017 www.aosmd.com page 6 of 6 downloaded from: http:///
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